Performance Analysis of High-K Dielectric Heterojunction High Electron Mobility Transistor for RF Applications

Document Type : Original Article

Authors

1 Department of Electronics and Communication Engineering, Teegala Krishna Reddy Engineering Coolege, Meerpet,Hyderabad, TS, India

2 Department of Electronics and Communication Engineering, Princeton Institution of Engineering and Technology for Women, Hyderabad, India

3 Department of Electronics and Communication Engineering, Kodada Institute of Technology and Science for Women, Kodad, TS, India

4 Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh-522502, India

Abstract

We have designed and simulated a 10-nanometer regime gate High Electron Mobility Transistor (HEMT) with an undoped region (UR) under the gate with high k dielectric as hafnium oxide (HfO2). The thickness of metal gate(G) and undoped regions are equal but length of  channel(C) is not equivalent. The proposed Undoped under the gate dielectric High Electron Mobility Transistor reduces the maximum electric field(V) in the channel region and increases the drain current significantly. The High-K dielectric High Electron Mobility Transistor structure obtained a saturated Ion current of 60% higher than the conventional structure.  For High critical Power and High-frequency Power transmission Amplifiers utilizes the AlGaN/GaN/SiC-based High Electron Mobility Transistor with an undoped region under the gate with High-K Hafnium oxide. The Proposed advanced High Electron Mobility Transistor Produces a higher Drain current (Id), 54% high transconductance (Gm) with Low On-Resistance (Ron), and High conductivity in comparison to typical High Electron Mobility Transistor. In Addition to these improved characteristics, the Electric field along the Y direction is also observed. The proposed structure formed by Low-k Dielectric materials in the process of Silicon Dioxide(SiO2) and High-k dielectric being Titanium Dioxide (TiO2) and Hafnium Oxide (HfO2) created more opportunities in Power electronics and radio frequency operations.

Keywords

Main Subjects

References

  1. Liao, B., Zhou, Q., Qin, J. and Wang, H., "Simulation of algan/gan hemts’ breakdown voltage enhancement using gate field-plate, source field-plate and drain field plate", Electronics, Vol. 8, No. 4, (2019), 406. https://doi.org/10.3390/electronics8040406
  2. Gowthami, Y., Balaji, B. and Srinivasa Rao, K., "Performance analysis and optimization of asymmetric front and back pi gates with dual material in gallium nitride high electron mobility transistor for nano electronics application", International Journal of Engineering, Transactions A: Basics Vol. 36, No. 7, (2023), 1269-1277. doi: 10.5829/ije.2023.36.07a.08.
  3. Wu, Y., Jacob-Mitos, M., Moore, M.L. and Heikman, S., "A 97.8% efficient gan hemt boost converter with 300-w output power at 1 mhz.", IEEE Electron Device Letters, Vol. 29, No. 8, (2008), 824-826. https://doi.org/10.1109/LED.2008.200092
  4. Kwak, H.-T., Chang, S.-B., Kim, H.-J., Jang, K.-W., Yoon, H.S., Lee, S.-H., Lim, J.-W. and Kim, H.-S., "Operational improvement of algan/gan high electron mobility transistor by an inner field-plate structure", Applied Sciences, Vol. 8, No. 6, (2018), 974. https://doi.org/10.3390/app8060974
  5. Gowthami, Y., Balaji, B. and Rao, K.S., "Design and performance evaluation of 6nm hemt with silicon sapphire substrate", Silicon, Vol. 14, No. 17, (2022), 11797-11804. https://doi.org/10.1007/s12633-022-01900-7
  6. Kumar, P.K., Balaji, B. and Rao, K.S., "Performance analysis of sub 10 nm regime source halo symmetric and asymmetric nanowire mosfet with underlap engineering", Silicon, Vol. 14, No. 16, (2022), 10423-10436. https://doi.org/10.1007/s12633-022-01747-y
  7. Howldar, S., Balaji, B. and Srinivasa Rao, K., "Design and qualitative analysis of hetero dielectric tunnel field effect transistor device", International Journal of Engineering, Transactions C: Aspects, Vol. 36, No. 6, (2023), 1129-1135. doi: 10.5829/ije.2023.36.06c.11.
  8. Karimi, G. and Shirazi, S., "Ballistic (n, 0) carbon nanotube field effect transistors\'iv characteristics: A comparison of n= 3a+ 1 and n= 3a+ 2", International Journal of Engineering, Transactions A: Basics, Vol. 30, No. 4, (2017), 516-522. doi: 10.5829/idosi.ije.2017.30.04a.09.
  9. Dixit, A. and Gupta, N., "A compact model of gate capacitance in ballistic gate-all-around carbon nanotube field effect transistors", International Journal of Engineering, Transactions A: Basics, Vol. 34, No. 7, (2021), 1718-1724. doi: 10.5829/IJE.2021.34.07A.16.
  10. Chakrabarty, R., Roy, S., Pathak, T. and Kumar Mandal, N., "Design of area efficient single bit comparator circuit using quantum dot cellular automata and its digital logic gates realization", International Journal of Engineering, Transactions C: Aspects, Vol. 34, No. 12, (2021), 2672-2678. doi: 10.5829/ije.2021.34.12c.13.
  11. Kobayashi, K., Hatakeyama, S., Yoshida, T., Piedra, D., Palacios, T., Otsuji, T. and Suemitsu, T., "Current collapse suppression in algan/gan hemts by means of slant field plates fabricated by multi-layer sicn", Solid-state Electronics, Vol. 101, (2014), 63-69. https://doi.org/10.1016/j.sse.2014.06.022
  12. Roy, A., Mitra, R. and Kundu, A., "Influence of channel thickness on analog and rf performance enhancement of an underlap dg algan/gan based mos-hemt device", in 2019 Devices for Integrated Circuit (DevIC), IEEE. (2019), 186-190.
  13. Nishitani, T., Yamaguchi, R., Asubar, J., Tokuda, H. and Kuzuhara, M., "Improved on-state breakdown characteristics in algan/gan mos-hemts with a gate field plate", in 2019 Compound Semiconductor Week (CSW), IEEE. (2019), 1-2.
  14. Mehrabani, A.H., Fattah, A. and Rahimi, E., "Design and simulation of a novel hetero-junction bipolar transistor with gate-controlled current gain", International Journal of Engineering, Transactions C: Aspects, , Vol. 36, No. 03, (2023), 433. doi: 10.5829/ije.2023.36.03c.01.
  15. Herrera, F.A., Hirano, Y., Iizuka, T., Miura-Mattausch, M., Kikuchihara, H., Navarro, D., Mattausch, H.J. and Ito, A., "Compact modeling for leading-edge thin-layer mosfets with additional applicability in device optimization toward suppressed short-channel effects", in 2019 Electron Devices Technology and Manufacturing Conference (EDTM), IEEE. (2019), 29-31.
  16. Smith, J.A., Takeuchi, H., Stephenson, R., Chen, Y., Hytha, M., Mears, R.J. and Datta, S., "Experimental investigation of n-channel oxygen-inserted (oi) silicon channel mosfets with high-k/metal gate stack", in 2018 76th Device Research Conference (DRC), IEEE. (2018), 1-2.
  17. Kumar, S. and Sahoo, G., "A random forest classifier based on genetic algorithm for cardiovascular diseases diagnosis (research note)", International Journal of Engineering, Transactions B: Applications,, Vol. 30, No. 11, (2017), 1723-1729. doi: 10.5829/ije.2017.30.11b.13.
  18. Canali, C., Majni, G., Minder, R. and Ottaviani, G., "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature", IEEE Transactions on Electron Devices, Vol. 22, No. 11, (1975), 1045-1047. https://doi.org/10.1109/T-ED.1975.18267
  19. Emami, N. and Kuchaki Rafsanjani, M., "Extreme learning machine based pattern classifiers for symbolic interval data", International Journal of Engineering, Transactions B: Applications, , Vol. 34, No. 11, (2021), 2545-2556. doi: 10.5829/IJE.2021.34.11B.17
  20. Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F. and Huang, C.-F., "Effects of gate field plates on the surface state related current collapse in algan/gan hemts", IEEE Transactions on Power Electronics, Vol. 29, No. 5, (2013), 2164-2173. https://doi.org/10.1109/TPEL.2013.2288644
  21. Mizutani, T., Ohno, Y., Akita, M., Kishimoto, S. and Maezawa, K., "A study on current collapse in algan/gan hemts induced by bias stress", IEEE Transactions on Electron Devices, Vol. 50, No. 10, (2003), 2015-2020. https://doi.org/10.1109/TED.2003.816549
  22. Meng, Q., Lin, Q., Jing, W., Han, F., Zhao, M. and Jiang, Z., "Tcad simulation for nonresonant terahertz detector based on double-channel gan/algan high-electron-mobility transistor", IEEE Transactions on Electron Devices, Vol. 65, No. 11, (2018), 4807-4813. https://doi.org/10.1109/TED.2018.2869291
  23. Ping, A., Chen, Q., Yang, J., Khan, M.A. and Adesida, I., "Dc and microwave performance of high-current algan/gan heterostructure field effect transistors grown on p-type sic substrates", IEEE Electron Device Letters, Vol. 19, No. 2, (1998), 54-56. https://doi.org/10.1109/55.658603
  24. Kamath, A., Patil, T., Adari, R., Bhattacharya, I., Ganguly, S., Aldhaheri, R.W., Hussain, M.A. and Saha, D., "Double-channel algan/gan high electron mobility transistor with back barriers", IEEE Electron Device Letters, Vol. 33, No. 12, (2012), 1690-1692. https://doi.org/10.1109/LED.2012.2218272
  25. Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S. and Mishra, U., "Algan/gan high electron mobility transistors with ingan back-barriers", IEEE Electron Device Letters, Vol. 27, No. 1, (2005), 13-15. https://doi.org/10.1109/LED.2005.860882
  26. Lee, D.S., Gao, X., Guo, S., Kopp, D., Fay, P. and Palacios, T., "300-ghz inaln/gan hemts with ingan back barrier", IEEE Electron Device Letters, Vol. 32, No. 11, (2011), 1525-1527. https://doi.org/10.1109/LED.2011.2164613
  27. Shinohara, K., Regan, D., Corrion, A., Brown, D., Burnham, S., Willadsen, P., Alvarado-Rodriguez, I., Cunningham, M., Butler, C. and Schmitz, A., "Deeply-scaled self-aligned-gate gan dh-hemts with ultrahigh cutoff frequency", in 2011 International Electron Devices Meeting, IEEE. (2011), 19.11. 11-19.11. 14.
  28. Kumar, V., Lu, W., Schwindt, R., Kuliev, A., Simin, G., Yang, J., Khan, M.A. and Adesida, I., "Algan/gan hemts on sic with f t of over 120 ghz", IEEE Electron Device Letters, Vol. 23, No. 8, (2002), 455-457. https://doi.org/10.1109/LED.2002.801303
  29. Shinohara, K., Yamashita, Y., Endoh, A., Hikosaka, K., Matsui, T., Mimura, T. and Hiyamizu, S., "Ultrahigh-speed pseudomorphic ingaas/inalas hemts with 400-ghz cutoff frequency", IEEE Electron Device Letters, Vol. 22, No. 11, (2001), 507-509. https://doi.org/10.1109/55.962645
  30. Fouladinia, F. and Gholami, M., "Decimal to excess-3 and excess-3 to decimal code converters in qca nanotechnology", (2022). https://doi.org/10.21203/rs.3.rs-2218039/v1
International Journal of Engineering
Volume 36, Issue 9
TRANSACTIONS C: Aspects
September 2023
Pages 1652-1658

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