Design and Simulation of Silicon Germanium Based Full Gate Tunnel FET

Articles in Press

Document Type : Original Article

Authors

1 Department of ECE, KL University

2 Green Fields, Vaddeswaram

3 Department of Electronics & Communication Engineering,Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur Dist,-522502,AP-India.

Abstract

This research delves into the utilization of a novel dielectrically modulated double gate junctionless tunnel field effect transistor (DM-DG-JLTFET) structure for biosensing applications. This paper investigates the fundamental physics underlying these device architectures and evaluates their efficiency in sensing various biomolecules. Employing extensive device-level simulations, we analyze the sensing capabilities of the DM-DG-JLTFET for both charged and charge-neutral biomolecules. Here, we have explored the impact of biomolecule dielectric constants and charge densities on sensor performance. The crucial role of gate and drain biasing conditions in enhancing sensor sensitivity. We have identified gate and drain bias as essential design parameters for optimizing sensor efficiency. Through TCAD simulations, we have assessed the potential of the DM-DG-JLTFET in bio-molecule recognition. This assessment involves scrutinizing alterations in key parameters such as drain current, energy band structures, and electric potential to gain deeper insights into its performance. This research underscores the promising prospects of DM-DG-JLTFETs as versatile biosensors and provides valuable insights for their further development and optimization in biosensing applications.

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International Journal of Engineering

Articles in Press, Accepted Manuscript
Available Online from 05 April 2024

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