Design and Simulation of Silicon Germanium Based Double Gate Tunnel FET

Document Type : Original Article

Authors

1 Department of ECE, KL University

2 Department of Electronics & Communication Engineering,Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Guntur Dist,-522502,AP-India.

Abstract

This paper presents the symmetric structure of silicon germanium based double gate drain pocket

tunnel field effect transistor(SIG-DG-TFET) and for the first time we have proposed cavity on drain

side with thickness of 10nm and 15nm length and it improves the performance of the gate control and tunneling phenomena. The objective of this study is to investigate the potential of the novel structure for the label-free detection of biological molecules. The research paper employs TCAD simulation to analyze the SIG-DG-TFET's capability for bio-molecule recognition by studying changes in parameters such as drain current, electric field, sub-threshold slope, surface potential, and ION/IOFF ratio. In the simulations of the SIG-DG-TFET device, various factors were considered, including structural modifications and changes in dielectric constants associated with positive and negative charges. When biological molecules occupy a confined space above the tunneling junction in the nano cavity, it causes changes in the electrical properties of the device Additionally, real-world

hurdles .encountered with the TAT (Trap-Assisted Tunneling) component and partial fill factor have

emphasized the potential viability of the proposed biosensor. The effectiveness of the biosensor was validated through the investigation of biotin-streptavidin binding, showcasing its adeptness in detection. The device architecture proposed in this study demonstrates promising results in the detection of biological molecules, irrespective of their charge status, encompassing both neutral and charged varieties.

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