Design and Analysis of Symmetrical Dual Gate Tunnel Field Effect Transistor with Gate Dielectric Materials in 10nm Technology

Document Type : Original Article

Authors

Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India

Abstract

In this work, a Symmetrical Dual Gate Tunnel Field Effect Transistor (SDGTFET) is proposed with gate dielectric materials in 10nm technology. The electrical performance parameters of this proposed device are investigated using technology computer aided design (TCAD) simulator. The new SDGTFET employing with high-k dielectric material such as hafnium oxide (HfO2) and interfacial layer (IL). The 2nm HfO2 with 30 dielectric constant is used between the interfacial layer and the metal gate on both sides of the device. The variation of the drain current with the varying of gate length, effective gate materials and effective oxide layer thickness of the device is evaluated in this work. By optimizing the proposed device with gate dielectric material the on current gets ∼4.2 times enhanced and the averaged subthreshold swing (SSavg) becomes reduced from 90.2 mV/dec to 53.8 mV/dec. Therefore, the SDGTFET structure has better performance than single material and double material TFET and shows a lower ambipolar current and a better on current to off current ratio.

Graphical Abstract

Design and Analysis of Symmetrical Dual Gate Tunnel Field Effect Transistor with Gate Dielectric Materials in 10nm Technology

Keywords

Main Subjects

References

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International Journal of Engineering
Volume 37, Issue 4
TRANSACTIONS A: Basics
April 2024
Pages 588-595

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