@article { author = {Valiollahi, S and Ardeshir, G}, title = {A Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs}, journal = {International Journal of Engineering}, volume = {31}, number = {2}, pages = {270-277}, year = {2018}, publisher = {Materials and Energy Research Center}, issn = {1025-2495}, eissn = {1735-9244}, doi = {}, abstract = {A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating voltages using a heuristic optimization algorithm. The obtained results demonstrate only 1.28% and 0.97% average error in IBM 0.13um CMOS technology for NMOS and PMOS, respectively, comparing with the accurate physically-based BSIM3 model. Furthermore, the tolerance of the model accuracy against parameters variation is investigated.}, keywords = {deep submicron,heuristic optimization,MOSFET modeling,nth,Power law model,short channel effects,Sub,threshold current}, url = {https://www.ije.ir/article_73117.html}, eprint = {https://www.ije.ir/article_73117_3b4c9587a59f551d194d7b7f70e6d543.pdf} }